Passivation of pigment-grade TiO(2) particles by nanothick atomic layer deposited SiO(2) films |
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Authors: | King David M Liang Xinhua Burton Beau B Kamal Akhtar M Weimer Alan W |
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Affiliation: | Department of Chemical and Biological Engineering, University of Colorado, UCB 424, Boulder, CO 80309-0424, USA. |
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Abstract: | Pigment-grade TiO(2) particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO(2) and Al(2)O(3) layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO(2) films were deposited using tris-dimethylaminosilane (TDMAS) and H(2)O(2) at 500?°C. Trimethylaluminum and water were used as precursors for Al(2)O(3) ALD at 177?°C. The photocatalytic activity of anatase pigment-grade TiO(2) was decreased by 98% after the deposition of 2?nm SiO(2) films. H(2)SO(4) digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO(2) digest rate was 40 times faster for uncoated TiO(2) than SiO(2) coated over a 24?h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H(2)O(2) chemistry can deposit high quality, fully dense SiO(2) films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO(2) particles. |
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