| (Zn,Mg)TiO_3微波介质陶瓷性能的改善 |
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| 引用本文： | 左洋,赵麒植,唐斌,张树人.(Zn,Mg)TiO_3微波介质陶瓷性能的改善[J].电子元件与材料,2012,31(2):1-4. |
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| 作者姓名： | 左洋 赵麒植 唐斌 张树人 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 摘 要： | 采用固相反应法制备了(Zn,Mg)TiO3(ZMT)微波介质陶瓷,研究分别添加CaTiO3和BaLiBSi对ZMT陶瓷介电性能的影响。结果表明:CaTiO3和BaLiBSi均能调节ZMT陶瓷的温度系数τε值;BaLiBSi能有效降低ZMT陶瓷的烧结温度,抑制Zn2TiO4相的产生,提高所制陶瓷的微波介电性能。当添加质量分数10%的CaTiO3时,950℃烧结的(Zn1.06Mg0.12)TiO3陶瓷的τε值接近零:–6×10–6/℃。加入质量分数1.2%的BaLiBSi时,900℃烧结的(Zn1.13Mg0.048)Ti1.29O3陶瓷具有最佳的微波介电性能:εr≈24.8,Q.f=10 898 GHz,τε=17×10–6/℃。
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| 关 键 词： | 微波介质陶瓷 (Zn Mg)TiO3 介电性能 温度系数 |
Improvement on properties of (Zn, Mg) TiO3 microwave dielectric ceramics |
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| ZUO Yang
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ZHAO Qizhi
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TANG Bin
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ZHANG Shuren.Improvement on properties of (Zn, Mg) TiO3 microwave dielectric ceramics[J].Electronic Components & Materials,2012,31(2):1-4. |
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| Authors: | ZUO Yang ZHAO Qizhi TANG Bin ZHANG Shuren |
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| Affiliation: | (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | (Zn,Mg)TiO3(ZMT) microwave dielectric ceramics were prepared by conventional solid state reaction method.The effects of CaTiO3 and BaLiBSi addition on the dielectric properties of the ZMT ceramics were investigated.The results show that CaTiO3 and BaLiBSi both can adjust the value of temperature coefficient τε.The BaLiBSi additives can decrease the sintering temperature and restrain the formation of Zn2TiO4,which keeps ZMT ceramics with excellent microwave dielectric properties.(Zn1.06Mg0.12)TiO3 ceramics doped with mass fraction of 10% of CaTiO3 sintered at 950 ℃ has a τε value near to zero:-6×10-6/℃.(Zn1.13Mg0.048)Ti1.29O3 doped with mass fraction of 1.2% of BaLiBSi sintered at 900 ℃ exhibits the optimum microwave dielectric properties: εr≈24.8,Q·f =10 898 GHz,τε=17×10-6/℃. |
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| Keywords: | microwave dielectric ceramics (Zn Mg)TiO3 dielectric properties temperature coefficient |
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