| AZO透明导电薄膜的制备 |
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| 引用本文： | 刘丹妮,史永胜,马猛飞,杨巍巍,杨若欣. AZO透明导电薄膜的制备[J]. 电子元件与材料, 2012, 31(6): 71-75 |
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| 作者姓名： | 刘丹妮 史永胜 马猛飞 杨巍巍 杨若欣 |
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| 作者单位： | 陕西科技大学 电气与信息工程学院,陕西西安,710021 |
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| 基金项目： | 陕西省教育厅基金资助项目，陕西科技大学博士专项基金资助项目 |
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| 摘 要： | 采用射频磁控溅射法在玻璃衬底上制备了ZnO:Al(AZO)透明导电薄膜,并借助XRD、SEM等表征方法,研究了溅射功率和衬底温度对薄膜结构、表面形貌及光电特性的影响。结果表明,制备薄膜的最佳溅射功率和衬底温度分别为180 W、200℃,在此条件下制备的AZO薄膜具有明显的c轴(002)择优取向,其最低方块电阻为18/□,在可见光范围内的平均透光率超过91%,且透明导电性能优于目前平板显示器的要求,有望取代现在市场上的主流氧化铟锡(ITO)薄膜。
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| 关 键 词： | AZO 溅射功率 衬底温度 结构特性 光电特性 |
Preparation of AZO transparent conductive thin films |
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| LIU Danni , SHI Yongsheng , MA Mengfei , YANG Weiwei , YANG Ruoxin. Preparation of AZO transparent conductive thin films[J]. Electronic Components & Materials, 2012, 31(6): 71-75 |
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| Authors: | LIU Danni SHI Yongsheng MA Mengfei YANG Weiwei YANG Ruoxin |
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| Affiliation: | (College of Electrical and Information Engineering,Shanxi University of Science and Technology,Xi’an 710021,China) |
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| Abstract: | Aluminum doped zinc oxide films were deposited by RF-magnetron sputtering method on glass substrate,the effects of sputtering power and substrate temperature on the structure,surface topography,photoelectric properties of AZO films were investigated by using XRD、SEM,et al.The results show that the best sputtering power and substrate temperature to prepare films are 180 W and 200 ℃ respectively.The AZO film prepared on this condition is highly oriented along c-axis(002),and the lowest sheet resistance is 18 Ω/□,the average transmittance in the visible light range is over 91%.Its transparent and conductive properties are superior to the current requirements of flat-panel displays,thus it is expected to replace indium tin oxide(ITO) film which is the mainstream thin film on the market now. |
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| Keywords: | AZO sputtering power substrate temperature structural properties photoelectric properties |
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