| 12dB微波薄膜衰减器的设计与制备 |
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| 引用本文： | 李凌,王磊,彭斌,张万里,蒋洪川.12dB微波薄膜衰减器的设计与制备[J].电子元件与材料,2012,31(3):64-66. |
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| 作者姓名： | 李凌 王磊 彭斌 张万里 蒋洪川 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 基金项目： | 教育部支撑技术资助项目，四川省支撑计划资助项目，中央高校基本科研业务费专项资金资助项目 |
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| 摘 要： | 基于T型衰减网络结构设计并仿真了工作频率为DC~3GHz的微波薄膜衰减器,并采用磁控溅射法在BeO基片上制备了TaN微波薄膜衰减器。仿真结果表明,所设计的微波薄膜衰减器在DC~3GHz工作频率内,衰减量为12 dB,输入端口电压驻波比小于1.1。测试结果表明,所制备的微波薄膜衰减器在DC~3GHz工作频率内,衰减量为(12.0±0.5)dB。
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| 关 键 词： | 微波薄膜衰减器 TaN薄膜 T型衰减网络 |
Design and fabrication of 12 dB microwave thin film attenuator |
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| LI Ling
,
WANG Lei
,
PENG Bin
,
ZHANG Wanli
,
JIANG Hongchuan.Design and fabrication of 12 dB microwave thin film attenuator[J].Electronic Components & Materials,2012,31(3):64-66. |
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| Authors: | LI Ling WANG Lei PENG Bin ZHANG Wanli JIANG Hongchuan |
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| Abstract: | Based on the T-attenuation network, a microwave thin-film attenuator operating at DC-3GHz was designed and simulated. The TaN thin-film microwave attenuator was fabricated on BeO substrate by magnetron sputtering. The simulation results show that the attenuation of the designed microwave thin-film attenuator is 12 dB in the frequency range of DC-3GHz and the input port VSWR is less than 1.1. The experimental results show that the attenuation of the fabricated microwave thin-film attenuator is (12.0±0.5) dB in the frequency range of DC-3GHz. |
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| Keywords: | microwave thin-film attenuator TaN thin film T-attenuation network |
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