| 基于DCIV法对pMOSFET热载流子损伤的研究 |
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| 引用本文： | 冯志刚,何波涌.基于DCIV法对pMOSFET热载流子损伤的研究[J].半导体技术,2009,34(3). |
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| 作者姓名： | 冯志刚 何波涌 |
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| 作者单位： | 1. 上海交通大学微电子学院,上海200240;上海宏力半导体制造有限公司,上海201203
2. 上海交通大学微电子学院,上海,200240 |
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| 基金项目： | 国家自然科学基金，上海交通大学微电子学院科研基金 |
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| 摘 要： | 利用新型的直流电流电压(DCIV)法研究了热载流子应力下的亚微米pMOSFET的氧化层陷阱电荷和表面态产生行为,并对热载流子应力下pMOSFET的阈值电压和线性区漏端电流的退化机制做出了物理解释.实验发现在栅极电压较高的热载流子应力条件下,热载流子引发表面态密度随时间变化的两个阶段:第一阶段,电负性的氧化层陷阱电荷起主导作用,使线性区漏端电流随时间增加;第二阶段,表面态逐渐起主导作用,导致线性电流随时间逐渐减小.
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| 关 键 词： | 热裁流子退化 表面态 氧化层电荷 |
Investigation on pMOSFET During Hot-Carrier Degradation by DCIV Method |
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| Feng Zhigang,He Boyong.Investigation on pMOSFET During Hot-Carrier Degradation by DCIV Method[J].Semiconductor Technology,2009,34(3). |
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| Authors: | Feng Zhigang He Boyong |
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| Affiliation: | 1.School of Microelectronics;Shanghai Jiao Tong University;Shanghai 200240;China;2.Grace Semiconductor Manufacturing Corporation;Shanghai 201203;China |
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| Abstract: | Oxide charge and interface states in submicron surface-channel LDD pMOSFETs,generated under different hot-carrier(HC)stress conditions were investigated by direct-current current-voltage(DCIV)technique.Physical explanation of threshold voltage shift and linear current degradation of pMOSFET under hot carrier stress were given and demonstrated.Two stages of the interface states changing with the variation of time induced by hot-carrier were found in the conditions of hot carrier stress with high gate voltage... |
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| Keywords: | pMOSFET |
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