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Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD |
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| Authors: | An-Bo Zhi Fu-Wen Qin Dong Zhang Ji-ming BianBo Yu Zhi-Feng Zhou Xin Jiang |
| Affiliation: | a School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China b Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China c Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Straße 9-11, D-57076 Siegen, Germany |
| Abstract: | High quality InN films are deposited with an interlayer of high c-orientation (002) AZO (Aluminium-doped Zinc Oxide; ZnO:Al) films on glass substrates by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at low temperature. AZO films used as a buffer layer are effective for the epitaxial growth of InN films. The influence of Trimethyl Indium (TMIn) flux on the properties of InN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and optical transmittance spectra. The results indicate that high quality InN films with high c-orientation and small surface roughness are successfully achieved at an optimized Trimethyl Indium (TMIn) flux of 5.5 sccm. The InN/AZO structures have great potential for the development of full spectra solar cells. |
| Keywords: | Low temperature InN Glass substrates ECR-PEMOCVD |
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