The effect of substrate temperature on the oxidation behavior of erbium thick films |
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| Authors: | HH ShenSM Peng XG LongXS Zhou L YangXT Zu |
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| Affiliation: | a Department of Applied Physics, University of Electronic Science and Technology of China, No. 4, Section 2, North Jianshe Road, Chengdu 610054, China
b Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China |
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| Abstract: | The effect of substrate temperature on the oxidation behavior of erbium thick films, fabricated by electron-beam vapor deposition (EBVD), was investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The erbium thick film is black when it is deposited at substrate temperature below 450 °C and turns gray at higher substrate temperature in a vacuum pressure of approximately 1.5 × 10−6 Torr, which indicates that the thickness of erbium oxide layer formed on the surface of erbium films increases with the decreasing substrate temperature. XPS depth profile results demonstrate that the thickness of the surface erbium oxide layer of erbium film deposited at substrate temperature of 550 and 350 °C are about 50 and 75 nm, respectively. The thicker oxide layer at lower substrate temperatures may be attributed to grain size and the dynamic vacuum condition around the substrates. Other possible factors involved in the oxidation behavior are also discussed. |
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| Keywords: | Erbium thick film Substrate temperature Oxidation behavior Grain size |
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