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碳离子注入纯锆后在1 mol/L硫酸溶液中的腐蚀行为
引用本文:彭德全 白新德 陈宝山. 碳离子注入纯锆后在1 mol/L硫酸溶液中的腐蚀行为[J]. 稀有金属材料与工程, 2006, 35(6): 860-865
作者姓名:彭德全 白新德 陈宝山
作者单位:1. 清华大学,北京,100084
2. 建中化学公司,四川,宜宾,644000
摘    要:为了研究碳离子注入对纯锆耐蚀性的影响,用MEVVA源对纯锆样品进行了1×1016ions/cm2至1×1017ions/cm2的碳离子注入,注入加速电压为40 kV.用X射线光电子能谱(XPS)和俄歇电子谱(AES)分析了注入样品表层元素的价态和深度分布.透射电镜(TEM)用来观察碳离子注入样品的微观结构;碳离子注入样品后相结构的变化用掠角X射线衍射(GAXRD)来检测.纯锆注入样品随后浸入1 mol/L的硫酸溶液中,测其极化曲线以评价其耐蚀性.发现碳离子注入极大地提高了纯锆基体的耐蚀行为,剂量越高,耐蚀性越好.最后,对碳离子注入导致纯锆基体腐蚀行为发生改变的机理进行了讨论.

关 键 词:纯锆  耐蚀性  碳离子注入
文章编号:1002-185X(2006)06-0860-06
修稿时间:2005-05-01

Corrosion Behavior of Carbon Implanted Zirconium in 1 mol/L H2SO4
Peng Dequan,Bai Xinde,Chen Baoshan. Corrosion Behavior of Carbon Implanted Zirconium in 1 mol/L H2SO4[J]. Rare Metal Materials and Engineering, 2006, 35(6): 860-865
Authors:Peng Dequan  Bai Xinde  Chen Baoshan
Abstract:In order to study the effect of carbon ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted with carbon ions with fluence ranging from 1 × 1016 ions/cm2 (1E 16C) to 1 × 1017 ions/cm2, using a metal vapor vacuum arc source (MEVVA) at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES),respectively. Transmission electron microscopy (TEM) was used to examine the microstructure of the carbon-implanted samples. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the carbon ion implantation. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zirconium in a 1 mol/L H2SO4 solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of zirconium implanted with carbon ions. The higher the fluence, the better the corrosion resistance.Finally, the mechanism of the corrosion behavior of carbon-implanted zirconium was discussed.
Keywords:zirconium  corrosion resistance  carbon ion implantation
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