Gate-length dependence of DC and microwave properties ofsubmicrometer In0.53Ga0.47As HIGFETs |
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Authors: | Feuer M.D. Tennant D.M. Kuo J.M. Shunk S.C. Tell B. Chang T.-Y. |
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Affiliation: | AT&T Bell Labs., Holmdel, NJ; |
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Abstract: | In0.52Al0.48As/In0.53Ga0.47 As/InP heterostructure insulated-gate field-effect transistors (HIGFETs) with gate lengths from 1.1 and 0.3 μm have been fabricated, and their electrical performance is characterized at DC and microwave frequencies. The refractory-gate self-aligned process, applied to devices with In0.53Ga0.47As channels, yields an unprecedented combination of very-high speed and excellent uniformity. HIGFETs with Lg=0.6 μm showed average peak transconductance gm of 528 mS/mm and unity-current-gain cutoff frequency ft of 50 GHz. The uniformity of gm was better than 1%, and the voltage of the gm peak was uniform to ±30 mV. HIGFETs with Lg=0.3 μm showed f1 up to 63 GHz, but suffered from serious short-channel effect, due to excessive thickness of the InGaAs channel layer. A self-aligned technique for gate resistance reduction is shown to substantially improve microwave power gain |
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