Interface structure of sputter deposited CNx film on silicon substrate |
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Authors: | T. Fu Y. Zheng Y.G. Shen |
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Affiliation: | aState Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, PR China;bDepartment of Manufacturing Engineering and Engineering Management, City University of Hong Kong, Kowloon, Hong Kong, PR China |
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Abstract: | Amorphous carbon nitride (CNx, x = 0.05) films were reactively sputtered on Si(100) substrate, and the interface structure was studied by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). In cross-sectional TEM a gray interlayer about 5 nm thick between the bulk CNx film and silicon substrate is observed, and the interface is dense. A little Si impurity (< 1 at.%) is revealed in the films deposited for short time (7 s and 17 s) by XPS measurement. The in-depth XPS analyses indicate that there exists an interlayer with Si impurity above, and a sub-surface layer with C and N below the original surface of silicon substrate. The two layers have different chemical composition and bonding state. |
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Keywords: | Thin films Microstructure Carbon nitride Sputtering |
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