Enhancement of ferroelectricity in gadolinium (Gd) and transition metal (Ni, Co, Cr) Co-doped BiFeO3 thin films via a chemical solution deposition technique |
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| Authors: | J W Kim S S Kim H J Kim W J Kim C M Raghavan D Do M H Lee T K Song M H Kim |
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| Affiliation: | 1. Department of Physics, Changwon National University, Changwon, Gyeongnam, 641-773, Republic of Korea
2. School of Nano and Advanced Materials Engineering, Changwon National University, Changwon, Gyeongnam, 641-773, Republic of Korea
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| Abstract: | The BiFeO3 (BFO) and the gadolinium and transition metal ions co-doped (Bi0.9Gd0.1)(Fe0.975 TM 0.025)O3-δ (TM?=?Ni, Co and Cr, BGFNi, BGFCo and BGFCr) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Compared to the pure BFO, improved electrical and ferroelectric properties were observed in the co-doped (Bi0.9Gd0.1)(Fe0.975 TM 0.025)O3-δ thin films. Among the thin films, the BGFCr thin film exhibited large remnant polarization (2P r ), low coercive field (2E c ), and reduced leakage current density, which are 136 μC/cm2, 1360 kV/cm at 1470 kV/cm, and 5.14?×?10-6 A/cm2 at 100 kV/cm, respectively. |
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