An experimental determination of electron drift velocity in0.5-μm gate-length ion-implanted GaAs MESFET's

A microwave technique was used to determine the electron drift velocity in an ion-implanted GaAs MESFET with a 0.5×100-μm gate. The characteristics of the velocity versus drain-to-source voltage for a GaAs MESFET exhibit a peak velocity of 4.0, 3.3, and 2.2×10 ⁷ cm/s at 100%, 65%, and 31% of I_dss, respectively. This work presents the first experimental determination of electron drift velocity at various gate biases and provides verification for velocity overshoot in ion-implanted GaAs MESFETs