Effect of laser irradiation on the oxidizer transport and self-ogranization of the interfacial layer during thermal oxidation of silicon

The oxidation of silicon under mid and near-IR laser irradiation was compared with thermal and combined (thermal + laser-enhanced) oxidation processes. The average rate of oxidizer transport through the oxide layer and the time taken for the formation and self-organization of the interfacial layer between SiO₂ and Si were evaluated from kinetic data for the three regimes studied. The processes influenced by laser irradiation were identified.