A new GaAs technology for stable FETs at 300°C |
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| Authors: | Fricke K. Hartnagel H.L. Schutz R. Schweeger G. Wurfl J. |
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| Affiliation: | Inst. fuer Hochfrequenztech., Tech. Hochschule Darmstadt; |
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| Abstract: | A technology for the fabrication of GaAs devices for operation at 300°C is presented. The high reliability of the devices is mainly due to diffusion barrier of WSi2 in the ohmic contacts and to an optimized Si3N4 passivation. It is shown that MESFETs produced with this technology demonstrate a remarkable stability of their characteristics, even after 100 h of storage at 300°C, and only a little degradation after 100 h at 400°C |
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