Fabrication of GaN/GaN:Mn core/shell nanowires and their photoluminescences

We report on the fabrication of GaN/GaN:Mn core/shell nanowires (NWs) using a two-step metalorganic chemcial vapor deposition (MOCVD) and chloride-based chemical vapor transport (CVT) process. Structural analyses indicated that the heterostructure NWs were single crystalline and exhibited a core/shell and lozenge structure. The photoluminescence (PL) of the core/shell NWs showed a peak at a center wavelength of 454 nm, which was red-shifted compared to those of GaN and GaN:Mn NWs. This outcome indicates the accumulation of excited carriers at the interfaces that would be helpful in developing novel magnetism in diluted magnetic GaN:Mn semiconductors.