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Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen radical-assisted deposition method
Authors:Minsung Jeon  Hisashi Uchiyama  Koichi Kamisako
Affiliation:Department of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
Abstract:Tin-catalyzed silicon nanowires (SiNWs) were synthesized at various hydrogen gas flow rates using the hydrogen radical-assisted deposition method. Large quantities of SiNWs with various crystal phases were synthesized and their characteristics were estimated. Tin-capped SiNWs were straightly grown and their structures were changed with increasing hydrogen gas flow rates. Their diameters on the bottom side were increased ranging from approximately 50 to 200 nm and their lengths extended up to ~ 2 µm with increasing hydrogen gas flow rates.
Keywords:Tin catalyst  Silicon nanowires  Hydrogen radicals  VLS mechanism  Phase diagram
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