Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen radical-assisted deposition method |
| |
Authors: | Minsung Jeon Hisashi Uchiyama Koichi Kamisako |
| |
Affiliation: | Department of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan |
| |
Abstract: | Tin-catalyzed silicon nanowires (SiNWs) were synthesized at various hydrogen gas flow rates using the hydrogen radical-assisted deposition method. Large quantities of SiNWs with various crystal phases were synthesized and their characteristics were estimated. Tin-capped SiNWs were straightly grown and their structures were changed with increasing hydrogen gas flow rates. Their diameters on the bottom side were increased ranging from approximately 50 to 200 nm and their lengths extended up to ~ 2 µm with increasing hydrogen gas flow rates. |
| |
Keywords: | Tin catalyst Silicon nanowires Hydrogen radicals VLS mechanism Phase diagram |
本文献已被 ScienceDirect 等数据库收录! |