Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template

In this paper, high-quality GaN film is grown by hydride vapor phase epitaxy (HVPE) on in situ etched porous GaN template, which can be prepared by in situ etching of GaN template with HCl gas at high temperature. High-resolution X-ray diffraction measurement shows that the crystalline quality of HVPE-GaN film on porous GaN template is better than that directly deposited on as-grown GaN template. Micro Raman measurement reveals the compressive strain relaxation in the regrown GaN film on porous GaN template, which coincides with the result of the photoluminescence spectra measurement.