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Gallium nitride nanowires doped with magnesium
Authors:Dongdong Zhang  Huizhao Zhuang  Haibo Sun  Yuping Cao  Yinglong Huang  Zouping Wang  Ying Wang  Yongfu Guo
Affiliation:Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
Abstract:GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly.
Keywords:71  55  Eq  81  05  Ea  61  72  uj  62  23  Hj  61  46  Km  81  16  -c  81  15  Cd
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