Gallium nitride nanowires doped with magnesium |
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Authors: | Dongdong Zhang Huizhao Zhuang Haibo Sun Yuping Cao Yinglong Huang Zouping Wang Ying Wang Yongfu Guo |
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Affiliation: | Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China |
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Abstract: | GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly. |
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Keywords: | 71 55 Eq 81 05 Ea 61 72 uj 62 23 Hj 61 46 Km 81 16 -c 81 15 Cd |
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