Synthesis and field effect characteristics of Na2Ti3O7 nanowires |
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Authors: | Lijie Wang Qi Qi Jiahuan Hu Yi Zeng Geyu Lu |
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Affiliation: | State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China |
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Abstract: | Na2Ti3O7 nanowires with diameters of about 80-130 nm and lengths up to several tens of micrometers are synthesized via a simple hydrothermal method and characterized by the field-emission scanning electron microscopy and X-ray diffraction. Back-gate field-effect transistors based on these nanowires are fabricated on indium tin oxide glass substrates with polymethyl-methacrylate-co-glyciclyl-methacrylate as the gate insulator layers. Typical p-type semiconductor material properties are observed in our investigations. The field-effect mobility is about 0.1 cm2/Vs. The capacitance per unit area of the dielectric is 3.43 nF/cm2 (dielectric constant, k = 3.9). The on/off ratio is around 103 at the conduction of 10 V. |
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Keywords: | Nanomaterials Nanocomposites Semiconductors Electrical properties Transistors |
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