Numerical simulation of effects of cusp magnetic field on oxygen concentration of 300 mm CZ-Si |
| |
Authors: | WANG Yongtao XU Wenting DAI Xiaolin XIAO Qinghua DENG Shujun YAN Zhirui ZHOU Qigang |
| |
Affiliation: | 1. Semiconductor Materials Co., Ltd, General Reseach Institute of Nonferrous Metals, Beijing 100088, China ;General Research Institute for Non Ferrous Metals, Beijing 100088, China 2. Semiconductor Materials Co., Ltd, General Reseach Institute of Nonferrous Metals, Beijing 100088, China |
| |
Abstract: | In magnetic Czochralski (MCZ) silicon growth, the distance and diameter of the electrified coils may affect the magnetic field intensity and melt flow. By changing the above parameters, the optimum geometric configuration of the coils was attempted. Through analyses of the oxygen concentration distribution of the crystal/melt interface, axial and radial velocity distribution of melt and the magnetic field intensity in the melt, it is found that smaller diameter of coils contributes to reducing the needed current intensity and production costs. For a given current intensity, there is a best distance of coils when the oxygen concentration at crystal/melt interface reaches the lowest. |
| |
Keywords: | MCZ silicon cusp magnetic oxygen concentration numerical simulation |
本文献已被 CNKI 维普 万方数据 SpringerLink 等数据库收录! |
|