Internal voltage generator for low voltage, quarter-micrometerflash memories |
| |
| Authors: | Kawahara T. Saeki S. Jyouno Y. Miyamoto N. Kobayashi T. Kimura K. |
| |
| Affiliation: | Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne; |
| |
| Abstract: | A fabricated bandgap generator using 0.25-μm Flash memory process generated a stable reference voltage under 4 V, boosted from an external power supply of 2.5 V. The generated voltage was 1.297±0.025 V at a power supply of 4 V±10%; the temperature dependence was +0.7 mV/°C. The characteristics of a triple-well bipolar transistor for the Flash memory process are sufficient for a reference voltage generator; fT is 230 MHz, and HFE is 70. Dynamic operation reduced the average current consumption from 306 to 8.6 μA. Fabricated voltage-doubler circuits generated a voltage 1.8 times larger than that from conventional charge-pump circuits |
| |
| Keywords: | |
|
|
