| 激光气相化学诱导掺杂制作超薄结硅光电池及其参数研究 |
| |
| 引用本文： | 周政卓,李丁,邱明新,周玉良. 激光气相化学诱导掺杂制作超薄结硅光电池及其参数研究[J]. 中国激光, 1987, 14(9): 544-547 |
| |
| 作者姓名： | 周政卓 李丁 邱明新 周玉良 |
| |
| 作者单位： | 上海市激光技术研究所(周政卓，李丁，邱明新)，西北电讯工程学院(周玉良) |
| |
| 摘 要： | 用XeCl准分子激光作光源,以BBr_3为工作物质,在n型硅片表面进行激光气相化学诱导掺杂硼,制作太阳电池。获得的PN结表面最大掺杂浓度为1.2×10~(21)B~+/cm~3;在10~(17)B~+/cm~3处的结深为0.08μm;未镀增透膜的光电转换效率为9.5％。
|
| 收稿时间： | 1986-07-02 |
Si-photocell with ultra-shallow junction by GILD and its characteristics |
| |
| Abstract: | By means of GILD(gas immersion laser doping)on the surfaces of n-Si samples with BBra vapor as material, Si-photo-cells doped with boron have been manufactured with the maximum doping concentration of 1.2x 1021 B+/cm3 near the surface, the junction depth of 0.08/am at 1017 B+/cms and the conversion efficiency of about 9.5% without antireflection coatings. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
