电感耦合等离子体(ICP)深刻蚀的模型与模拟

为对交替复合深刻蚀过程进行工艺仿真,本文利用鞘层近似模型,以离子辅助刻蚀和直接粒子刻蚀的组合来实现交替复合深刻蚀过程中的刻蚀步骤,辅以各向同性钝化过程,对电感耦合等离子体深刻蚀（硅片）进行了建模.本文采用单一的二维廓线＂线算法＂模型实现对刻蚀材料的区分,进而实现了对电感耦合等离子体深刻蚀的二维模拟和三维带状显示.其优点是相比元胞及混合模型算法统一,运行效率高、速度快,且模拟结果与实验相比较为理想.

Model and simulation for inductively coupled plasma deep etching

A model for inductively coupled plasma deep etching simulation was developed based on time multiplexed deep etching(TMDE).A plasma sheath approximation is used in this model.Ion-assistant etching and uniform etching are alternately used in the whole etching process,and the deposition rate is set to be isotropic.The surface evolvement and material identification are achieved based on single string algorithm,so this model has higher executing efficiency and shorter runtime than other models based on cell or hybrid algorithm.Using this model,2-D simulation results and 3-D zonal visions were obtained.Comparing with the experiment results,the simulation results are quite perfect.