| 双栅动态阈值SOI nMOSFET数值模拟 |
| |
| 引用本文： | 毕津顺,吴峻峰,海潮和. 双栅动态阈值SOI nMOSFET数值模拟[J]. 半导体学报, 2006, 27(1): 35-40 |
| |
| 作者姓名： | 毕津顺 吴峻峰 海潮和 |
| |
| 作者单位： | 中国科学院微电子研究所,北京,100029 |
| |
| 摘 要： | 提出了新型全耗尽SOI平面双栅动态阈值nMOS场效应晶体管,模拟并讨论了器件结构、相应的工艺技术和工作机理.对于nMOS器件,背栅n阱是通过剂量为3×1013cm-2,能量为250keV的磷离子注入实现的,并与n+前栅多晶硅直接相连.这项技术与体硅工艺完全兼容.通过Tsuprem4和Medici模拟,发现全耗尽SOI平面双栅动态阈值nMOSFET保持了传统全耗尽SOI nMOSFET的优势,消除了反常亚阈值斜率和kink效应,同时较传统全耗尽SOI nMOSFET有更加优秀的电流驱动能力和跨导特性.
|
| 关 键 词： | 双栅结构 动态阈值 全耗尽绝缘体上硅 nMOS场效应晶体管 |
| 收稿时间： | 2015-08-20 |
Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET |
| |
| Bi Jinshun, Wu Junfeng, Hai Chaohe. Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET[J]. Journal of Semiconductors, 2006, In Press. Bi J S, Wu J F, Hai C H. Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET[J]. Chin. J. Semicond., 2006, 27(1): 35.Export: BibTex EndNote |
| |
| Authors: | Bi Jinshun Wu Junfeng Hai Chaohe |
| |
| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
| |
| Abstract: | A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by implantation of phosphorus at a dosage of 3 × 1013 cm-2 and an energy of 250keV and connected directly to a front-gate n+ polysilicon. This method is completely compatible with the conventional bulk silicon process. Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted (PD) SOI nMOSFET that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET. |
| |
| Keywords: | double-gate structure dynamicthreshold FDSOI nMOSFET |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
