| 适于薄膜SOI RESURF器件击穿电压模拟的高阶紧致差分格式离散的ADI方法 |
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| 引用本文： | 于宗光,刘战,王国章,须自明. 适于薄膜SOI RESURF器件击穿电压模拟的高阶紧致差分格式离散的ADI方法[J]. 半导体学报, 2006, 27(2): 354-357 |
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| 作者姓名： | 于宗光 刘战 王国章 须自明 |
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| 作者单位： | 1. 中国电子科技集团公司第58研究所,无锡,214035;江南大学信息工程学院,无锡,214035
2. 江南大学信息工程学院,无锡,214035 |
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| 摘 要： | 采用ADI与高阶紧致差分相结合的方法计算薄膜SOI RESURF结构击穿电压.数值计算表明,这种方法可以降低方程的迭代次数约40%,并明显减少方程的求解时间.
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| 关 键 词： | ADI 高阶紧致差分 SOI RESURF 击穿电压 |
| 收稿时间： | 2015-08-20 |
An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference |
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| Yu Zongguang, Liu Zhan, Wang Guozhang, Xu Ziming. An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference[J]. Journal of Semiconductors, 2006, In Press. Yu Z G, Liu Z, Wang G Z, Xu Z M. An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference[J]. Chin. J. Semicond., 2006, 27(2): 354.Export: BibTex EndNote |
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| Authors: | Yu Zongguang Liu Zhan Wang Guozhang Xu Ziming |
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| Affiliation: | No.58 Research Institute,China Electronics Technology Group Corporation,Wuxi 214036,China;Jiangnan University,Wuxi 214036,China;Jiangnan University,Wuxi 214036,China;No.58 Research Institute,China Electronics Technology Group Corporation,Wuxi 214036,China;Jiangnan University,Wuxi 214036,China;Jiangnan University,Wuxi 214036,China |
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| Abstract: | The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.Numerical results present that this method can decrease the number of iterative by 40% and reduce the computation time greatly. |
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| Keywords: | ADI high-order compact finite difference SOI RESURF breakdown voltage |
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