电子和中子辐照n型6H-SiC的光致发光谱

对用电子能量为1.7,0.5和0.4MeV的电子辐照和中子辐照后的n型6H-SiC样品进行低温光致发光研究.对于Ee≥0.5MeV电子辐照和中子辐照后的样品,首次发现了位于478.6/483.3/486.1n m的S1/S2/S3谱线.对样品进行热退火研究表明S1/S2/S3谱线在500℃下消失,而退火温度高于700℃时D1中心出现.考虑到产生C空位和Si空位所需的位移阈能以及热退火行为,说明S1/S2/S3为初级Si空位初级缺陷,而D1中心为二次缺陷.

Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC

n-type 6H-SiC materials irradiated with electrons having energies of Ee = 1.7,0.5, and 0.4MeV and neutrons are studied via low temperature photoluminescence. For Ee ≥0.5MeV electron-irradiated and neutron-irradiated samples, the LTPL emission lines S1/S2/S3 at 478. 6/483.3/486. 1nm are observed for the first time. Thermal annealing studies show that the defects S1/S2/S3 disappear at 500℃. However, the well-known D1-center is only detected for annealing temperatures over 700℃. By considering the threshold displacement energies of Emin (C) and Emin (Si) and thermal annealing behavior,it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect.