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高质量InAs单晶材料的制备及其性质
引用本文:赵有文,孙文荣,段满龙,董志远,杨子祥,吕旭如,王应利. 高质量InAs单晶材料的制备及其性质[J]. 半导体学报, 2006, 27(8): 1391-1395
作者姓名:赵有文  孙文荣  段满龙  董志远  杨子祥  吕旭如  王应利
作者单位:中国科学院半导体研究所,北京,100083
摘    要:利用液封直拉法(LEC)生长了直径50mm〈100〉和〈111〉晶向的InAs单晶.分析研究了n型杂质Sn,S和p型杂质Zn,Mn的分凝特性、晶格硬化作用、掺杂效率等.利用X射线双晶衍射分析了晶体的完整性.对InAs晶片的抛光、化学腐蚀和清洗进行了分析,在此基础上实现了抛光晶片的开盒即用(EPI-READY).

关 键 词:砷化铟  掺杂  抛光
收稿时间:2015-08-20

Growth and Properties of High Quality InAs Single Crystals
Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Zixiang, Lü Xuru, Wang Yingli. Growth and Properties of High Quality InAs Single Crystals[J]. Journal of Semiconductors, 2006, In Press. Zhao Y W, Sun W R, Duan M L, Dong Z Y, Yang Z X, Lü X, Wang Y L. Growth and Properties of High Quality InAs Single Crystals[J]. Chin. J. Semicond., 2006, 27(8): 1391.Export: BibTex EndNote
Authors:Zhao Youwen  Sun Wenrong  Duan Manlong  Dong Zhiyuan  Yang Zixiang  Lü Xuru  Wang Yingli
Affiliation:Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100084,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100085,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100087,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100088,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100089,China
Abstract:We grow 50mm-diameter InAs single crystals of 〈100〉 and 〈111〉 orientations with liquid encapsulated Czochralski (LEC) method.The segregation behavior,lattice hardening effect,and doping efficiency of n-type impurities S, Sn and p-type impurities Zn, Mn are studied.The lattice perfection of the InAs single crystal is studied with X-ray diffraction.The polishing,chemical etching and cleaning of an InAs wafer are analyzed.An epi-ready InAs polished single crystal wafer is realized.
Keywords:indium arsenide   doping   polishing
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