| 新型槽栅MOSFETs的特性 |
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| 引用本文： | 曹艳荣,马晓华,郝跃,于磊. 新型槽栅MOSFETs的特性[J]. 半导体学报, 2006, 27(11): 1994-1999 |
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| 作者姓名： | 曹艳荣 马晓华 郝跃 于磊 |
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| 作者单位： | 西安电子科技大学微电子学院宽,禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划) |
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| 摘 要： | 采用SIVALCO软件对槽栅与平面器件进行了仿真对比分析,结果表明槽栅器件能够有效地抑制短沟道及热载流子效应,而拐角效应是槽栅器件优于平面器件特性更加稳定的原因.对自对准工艺下成功投片所得沟道长度为140nm的槽栅器件进行测量,结果有力地证明了槽栅器件较平面器件的优越性.
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| 关 键 词： | 自对准 槽栅器件 短沟道效应 热载流子效应 拐角效应 |
| 收稿时间： | 2015-08-18 |
Characteristics of Groove-Gate MOSFETs |
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| Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei. Characteristics of Groove-Gate MOSFETs[J]. Journal of Semiconductors, 2006, In Press. Cao Y R, Ma X H, Hao Y, Yu L. Characteristics of Groove-Gate MOSFETs[J]. Chin. J. Semicond., 2006, 27(11): 1994.Export: BibTex EndNote |
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| Authors: | Cao Yanrong Ma Xiaohua Hao Yue Yu Lei |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China |
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| Abstract: | The groove- and planar-gate MOSFETs are compared and analyzed through simulation with the software SIVALCO,and the results show that the groove-gate MOSFETs can suppress short channel and hot carries effects.From the analysis of the field,we find that due to the corner effect,the performance of groove-gate MOSFETs is better than that of the planar.The groove-gate MOSFETs with 140nm channel length fabricated with a self-aligned process are tested,and the results effectively show the superiority of the groove-gate MOSFETs over the planar. |
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| Keywords: | self-aligned groove-gate MOSFETs short channel effects hot carries effects corner effect |
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