| 1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长 |
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| 引用本文： | 牛智川,倪海桥,方志丹,龚政,张石勇,吴东海,孙征,赵欢,彭红玲,韩勤,吴荣汉.1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长[J].半导体学报,2006,27(3). |
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| 作者姓名： | 牛智川 倪海桥 方志丹 龚政 张石勇 吴东海 孙征 赵欢 彭红玲 韩勤 吴荣汉 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083 |
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| 基金项目： | 中国科学院资助项目，国家科技攻关项目，国家重点基础研究发展计划(973计划) |
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| 摘 要： | 报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器.室温带边发射峰的半高宽小于35meV,表明量子点大小比较均匀.原子力显微镜图像显示,量子点密度可以控制在(1～7)×1010cm-2范围之内,而面密度处于4×1010cm-2时有良好的光致发光谱性能.含有三到五层1. 3μm量子点的激光器成功实现了室温连续激射.
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| 关 键 词： | 量子点 砷化铟 激光器 |
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy |
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| Niu Zhichuan,Ni Haiqiao,Fang Zhidan,Gong Zheng,Zhang Shiyong,Wu Donghai,Sun Zheng,Zhao Huan,Peng Hongling,Han Qin,Wu Ronghan.1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy[J].Chinese Journal of Semiconductors,2006,27(3). |
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| Authors: | Niu Zhichuan Ni Haiqiao Fang Zhidan Gong Zheng Zhang Shiyong Wu Donghai Sun Zheng Zhao Huan Peng Hongling Han Qin Wu Ronghan |
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| Abstract: | The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence(PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover, atomic force microscopy images show that the QD surface density can be controlled in the range from 1 × 1010 to 7 × 1010cm-2. The best PL properties are obtained at a QD surface density of about 4 × 1010cm-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported. |
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| Keywords: | quantum dot InAs laser diode |
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