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| 高性能1mm SiC基AlGaN/GaN功率HEMT研制 | |
| 引用本文： | 罗卫军,陈晓娟,李成瞻,刘新宇,和致经,魏珂,梁晓新,王晓亮. 高性能1mm SiC基AlGaN/GaN功率HEMT研制[J]. 半导体学报, 2006, 27(11): 1981-1983 |
| 作者姓名： | 罗卫军 陈晓娟 李成瞻 刘新宇 和致经 魏珂 梁晓新 王晓亮 |
| 作者单位： | 1. 中国科学院半导体研究所,北京,100083;中国科学院微电子研究所,北京,100029 2. 中国科学院微电子研究所,北京,100029 3. 中国科学院半导体研究所,北京,100083 |
| 基金项目： | 国家重点基础研究发展计划(973计划)，中国科学院知识创新工程项目 |
| 摘 要： | 在6H-SiC衬底上,外延生长了AlGaN/GaN HEMT结构,设计并实现了高性能1mm AlGaN/GaN微波功率HEMT,外延材料利用金属有机物化学气相淀积技术生长.测试表明,该lmm栅宽器件栅长为0.8μm,输出电流密度达到1.16A/mm,跨导为241mS/mm,击穿电压＞80V,特征频率达到20GHz,最大振荡频率为28GHz.5.4GHz连续波测试下功率增益为14.2dB,输出功率达4.1W,脉冲条件测试下功率增益为14.4dB,输出功率为5.2W,两端口阻抗特性显示了在微波应用中的良好潜力. |
| 关 键 词： | AlGaN/GaN 高电子迁移率晶体管 微波功率 功率增益 |
| 收稿时间： | 2015-08-18 |
Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate |
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| Luo Weijun, Chen Xiaojuan, Li Chengzhan, Liu Xinyu, He Zhijing, Wei Ke, Liang Xiaoxin, Wang Xiaoliang. Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate[J]. Journal of Semiconductors, 2006, In Press. Luo W J, Chen X J, Li C Z, Liu X Y, He Z J, Wei K, Liang X X, Wang X L. Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate[J]. Chin. J. Semicond., 2006, 27(11): 1981.Export: BibTex EndNote | |
| Authors: | Luo Weijun Chen Xiaojuan Li Chengzhan Liu Xinyu He Zhijing Wei Ke Liang Xiaoxin Wang Xiaoliang |
| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| Abstract: | This paper reports a high-performance AlGaN/GaN HEMT with 1 mm gate width on 6H-SiC substrate.The epitaxial materials of the device are grown with metal organic chemical vapor deposition.Test results indicate that the gate length of the device is 0.8μm,the output current density is 1.16A/mm,the transconductance is 241mS/mm,the breakdown voltage is greater than 80V,the current gain cutoff frequency reaches 20GHz,and the power gain cutoff frequency is 28GHz.The power gain of a continuous wave at 5.4GHz is 14.2dB,with an output power of 4.1W,while the corresponding results of pulsed power test are 14.4dB and 5.2W.Two ports impedance characteristics demonstrate good potential in microwave applications. |
| Keywords: | AlGaN/GaN HEMT microwave power power gain |
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