高压二极管中局域铂掺杂的寿命控制新技术

提出一种寿命控制新技术--氢离子辐照缺陷汲取铂局域寿命控制技术.所有样管首先进行能量为550keV,剂量为1×1013～5×1017cm-2的氢离子辐照;接着分别进行700～750℃,15～30min的退火,以完成铂在硅中的扩散和氢离子辐照缺陷对铂原子的汲取.随后,所有样管进行了深能级瞬态谱仪测试(DLTS),以得到缺陷汲取后样管中的铂浓度分布.最终,所有样品都得到了与氢离子辐照缺陷具有相似分布的局域铂浓度分布.同时,与现有的整体寿命控制技术和氢、氦离子辐照局域寿命控制技术相比,局域铂掺杂样管具有反向恢复时间小、反向恢复软度因子大和漏电流极小的优点.

Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages

A new lifetime control technique-localized platinum lifetime control (LPLC) is introduced. Silicon samples are implanted with 550keV protons at dosages from 1 × 1013 to 5 × 1014cm2. Subsequently,platinum diffusion in silicon is performed at 700 or 750℃ for 15 or 30min,respectively. Then the in-diffused platinum into damaged regions of the proton-implanted silicon is investigated by use of deep-level transient spectroscopy (DLTS). Finally,for all of the LPLC samples, the distribution of the in-diffused substitutional platinum agrees well with the damage distribution resulting from the low-dosage proton implantation. Also, the diodes show a very low leakage current even at elevated temperatures while keeping the major advantages of ion irradiation devices, including low turn-off loss and soft recovery.