| 截止频率53GHz的高性能0.18μm射频nMOSFET |
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| 引用本文： | 杨荣,李俊峰,徐秋霞,海潮和,韩郑生,钱鹤. 截止频率53GHz的高性能0.18μm射频nMOSFET[J]. 半导体学报, 2006, 27(8) |
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| 作者姓名： | 杨荣 李俊峰 徐秋霞 海潮和 韩郑生 钱鹤 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家自然科学基金 |
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| 摘 要： | 阐述了0.18μm射频nMOSFET的制造和性能.器件采用氮化栅氧化层/多晶栅结构、轻掺杂源漏浅延伸结、倒退的沟道掺杂分布和叉指栅结构.除0.18μm的栅线条采用电子束直写技术外,其他结构均通过常规的半导体制造设备实现.按照简洁的工艺流程制备了器件,获得了优良的直流和射频性能:阈值电压0.52V,亚阈值斜率80mV/dec,漏致势垒降低因子69mV/V,截止电流0.5nA/μm,饱和驱动电流458μA/μm,饱和跨导212μS/μm(6nm氧化层,3V驱动电压)及截止频率53GHz.
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| 关 键 词： | 结构 工艺 射频 nMOSFET |
A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency |
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| Yang Rong,Li Junfeng,Xu Qiuxia,Hai Chaohe,Han Zhengsheng,Qian He. A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J]. Chinese Journal of Semiconductors, 2006, 27(8) |
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| Authors: | Yang Rong Li Junfeng Xu Qiuxia Hai Chaohe Han Zhengsheng Qian He |
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| Abstract: | This paper presents the fabrication and performance of a 0.18μm nMOSFET for RF applications.This device features a nitrided oxide/poly-silicon gate stack,a lightly-doped-drain source/drain extension,a retrograde channel doping profile,and a multiple-finger-gate layout,each of which is achieved with conventional semiconductor fabrication facilities.The 0.18μm gate length is obtained by e-beam direct-writing.The device is fabricated with a simple process flow and exhibits excellent DC and RF performance:the threshold voltage of 0.52V,the sub-threshold swing of 80mV/dec,the drain-induced-barrier-lowering factor of 69mV/V,the off-state current of 0.5nA/μm,the saturation drive current of 458μA/μm (for the 6nm gate oxide and the 3V supply voltage),the saturation transconductance of 212μS/μm,and the cutoff frequency of 53GHz. |
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| Keywords: | structure process radio frequency nMOSFET |
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