| 低温沉积ZnO薄膜的压敏特性及其热处理影响 |
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| 引用本文： | 夏姣贞,陆慧,王璞,徐晓峰,杜明贵. 低温沉积ZnO薄膜的压敏特性及其热处理影响[J]. 半导体学报, 2006, 27(10): 1763-1766 |
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| 作者姓名： | 夏姣贞 陆慧 王璞 徐晓峰 杜明贵 |
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| 作者单位： | 华东理工大学物理系,上海,200237 |
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| 摘 要： | 采用GDARE法在较低温度下,通过一次和多次沉积制备单层及多层ZnO薄膜.AFM和XRD分析表明,薄膜具有以ZnO(002)晶面取向为主的多晶结构,多层膜的晶粒尺寸增大.经200～300℃退火热处理,薄膜呈现出良好的低压压敏特性.经200℃退火热处理后,多层ZnO薄膜的非线性系数达到61.54,压敏电压20.10V.在一定范围内升高热处理温度,可明显降低压敏电压.分析了不同膜层及热处理温度对ZnO薄膜压敏特性的影响机理.
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| 关 键 词： | ZnO薄膜 低温 膜层 热处理 压敏电压 非线性系数 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-04-29 |
Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures |
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| Xia Jiaozhen, Lu Hui, Wang Pu, Xu Xiaofeng, Du Minggui. Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures[J]. Journal of Semiconductors, 2006, In Press. Xia J Z, Lu H, Wang P, Xu X F, Du M G. Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures[J]. Chin. J. Semicond., 2006, 27(10): 1763.Export: BibTex EndNote |
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| Authors: | Xia Jiaozhen Lu Hui Wang Pu Xu Xiaofeng Du Minggui |
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| Affiliation: | Department of Physics,East China University of Science and Technology,Shanghai 200237,China;Department of Physics,East China University of Science and Technology,Shanghai 200237,China;Department of Physics,East China University of Science and Technology,Shanghai 200237,China;Department of Physics,East China University of Science and Technology,Shanghai 200237,China;Department of Physics,East China University of Science and Technology,Shanghai 200237,China |
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| Abstract: | Single-layer and multilayer ZnO thin films are deposited by means of gas discharge active reaction evaporation through single and multiple depositions at relatively lower temperatures.AFM and XRD patterns show that these films possess multicrystal fabric that gives priority to (002),and the grain dimension of the multilayer ZnO film is increased.A multilayer ZnO film with a nonlinear coefficient of 61.54 and varistor voltage of 20.10V can be obtained at a 200℃ annealing temperature.The varistor voltage can be reduced significantly by increasing the annealing temperature within a certain range.The mechanism behind the effect of different layers and annealing temperature on varistor characteristics of ZnO thin films is also discussed. |
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| Keywords: | ZnO thin film low temperature layer heat treatment varistor voltage nonlinearity coefficient |
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