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基于GaAs工艺的36GHz压控振荡器
引用本文:仇应华,王志功,朱恩,冯军,熊明珍,夏春晓. 基于GaAs工艺的36GHz压控振荡器[J]. 半导体学报, 2006, 27(3): 556-559
作者姓名:仇应华  王志功  朱恩  冯军  熊明珍  夏春晓
作者单位:东南大学射频与光电集成电路研究所,南京,210096
摘    要:利用法国OMMIC公司的0.2μm GaAs PHEMT工艺,设计实现了一个36GHz压控振荡器电路.该电路采用完全差分的调谐振荡器结构,通过引进容性源极耦合差动电流放大器和调谐负载电路,提高了电路的性能.测试表明:该压控振荡器中心频率为36GHz,调谐范围约为800MHz,在偏离中心频率10MHz处的单边带相位噪声为-98.83dBc/Hz.芯片面积为0.5mm×1mm,采用-5V单电源供电,核心单元功耗约为200mW.

关 键 词:压控振荡器  共面波导  容性耦合差动电流放大器  砷化镓
收稿时间:2015-08-20

A 36GHz Voltage Control Oscillator in GaAs PHEMT Technology
Qiu Yinghua, Wang Zhigong, Zhu En, Feng Jun, Xiong Mingzhen, Xia Chunxiao. A 36GHz Voltage Control Oscillator in GaAs PHEMT Technology[J]. Journal of Semiconductors, 2006, In Press. Qiu Y H, Wang Z G, Zhu E, Feng J, Xiong M Z, Xia C X. A 36GHz Voltage Control Oscillator in GaAs PHEMT Technology[J]. Chin. J. Semicond., 2006, 27(3): 556.Export: BibTex EndNote
Authors:Qiu Yinghua  Wang Zhigong  Zhu En  Feng Jun  Xiong Mingzhen  Xia Chunxiao
Affiliation:Institute of RF- & OE-ICs,Southeast University,Nanjing 210096,China;Institute of RF- & OE-ICs,Southeast University,Nanjing 210097,China;Institute of RF- & OE-ICs,Southeast University,Nanjing 210098,China;Institute of RF- & OE-ICs,Southeast University,Nanjing 210099,China;Institute of RF- & OE-ICs,Southeast University,Nanjing 210100,China;Institute of RF- & OE-ICs,Southeast University,Nanjing 210101,China
Abstract:36GHz voltage-controlled oscillator is designed and realized in OMMIC’s 0.2μm GaAs PHEMT technology.A fully differential structure is applied in the tunable oscillator.In order to improve the circuit performance,a capacitive-source-coupled current amplifier is used as the active part,and a single-tuned tank as a load.The measurement results show that the center frequency of the VCO is 36GHz and the tuning-range is 800MHz.The phase noise is –98.83dBc/Hz at a 10MHz offset.The chip area is 0.5mm×1mm,and the DC power consumption of the core is 200mW under a single -5V power supply.
Keywords:VCO   CPW   capacitive-source-coupled current amplifier   GaAs
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