| InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响 |
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| 引用本文： | 于彤军,康香宁,秦志新,陈志忠,杨志坚,胡晓东,张国义. InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响[J]. 半导体学报, 2006, 27(Z1) |
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| 作者姓名： | 于彤军 康香宁 秦志新 陈志忠 杨志坚 胡晓东 张国义 |
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| 作者单位： | 北京大学物理学院,介观物理和人工微结构国家重点实验室,北京,100871 |
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| 基金项目： | 国家自然科学基金，北京市科技计划 |
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| 摘 要： | 对蓝宝石衬底上的InGaN/GaN和InGaN/AlGaN多量子阱结构和经激光剥离去除衬底的InGaN/GaN和InGaN/AlGaN多量子阱结构薄膜样品,进行了光致发光谱、高分辨XRD和喇曼光谱测量.PL测量结果表明,相对于带有蓝宝石衬底的样品,InGaN/GaN多量子阱薄膜样品的PL谱峰值波长发生较小的蓝移,而InGaN/AlGaN多量子阱薄膜样品的PL谱峰值波长发生明显的红移;喇曼光谱的结果表明,激光剥离前后E2模的峰值从569.1减少到567.5cm-1.这说明激光剥离去除衬底使得外延层整体的压应力得到部分释放,但InGaN/GaN与InGaN/AlGaN多量子阱结构中阱层InGaN的应力发生了不同的变化.XRD的结果证实了这一结论.
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| 关 键 词： | 光致发光谱 InGaN AlGaN 多量子阱 应变 |
Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs |
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| Yu Tongjun,Kang Xiangning,Qin Zhixin,Chen Zhizhong,Yang Zhijian,Hu Xiaodong,Zhang Guoyi. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs[J]. Chinese Journal of Semiconductors, 2006, 27(Z1) |
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| Authors: | Yu Tongjun Kang Xiangning Qin Zhixin Chen Zhizhong Yang Zhijian Hu Xiaodong Zhang Guoyi |
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| Abstract: | Photoluminescence,HR-XRD,and Raman scattering spectra of InGaN/GaN MQWs and InGaN/AlGaN on sapphire and membranes with no substrate fabricated by laser lift-off are studied. In contrast to the emission peak from the membrane samples of InGaN/GaN MQWs, which blue-shifts after annealing at 700℃, a red-shift of the PL peak position in the InGaN/AlGaN MQW membrane sample is observed,showing different strain effects in these MQWs. In Raman scattering spectra,the InGaN/GaN MQW film without sapphire substrate has a lower E2mode frequency (567. 5cm-1) than that of the films with substrate (569. 1cm-1),which indicates that the compressive stress in the films is released partially when the sapphire substrate is taken off. |
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| Keywords: | photoluminescence InGaN AlGaN MQWs strain |
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