| 基于SiGe量子点实现增强F-N隧穿的低压闪速存储器 |
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| 引用本文： | 邓宁,潘立阳,刘志宏,朱军,陈培毅,彭力.基于SiGe量子点实现增强F-N隧穿的低压闪速存储器[J].半导体学报,2006,27(3). |
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| 作者姓名： | 邓宁 潘立阳 刘志宏 朱军 陈培毅 彭力 |
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| 作者单位： | 1. 清华大学微电子学研究所,北京,100084
2. 无锡微电子研究所,无锡,214035 |
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| 摘 要： | 提出了一种用于半导体闪速存储器单元的新的Si/SiGe量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制.模拟结果表明该结构具有高速和高可靠性的优点.测试结果表明该结构的工作电压比传统NAND结构的存储器单元降低了4V.采用该结构能够实现高速、低功耗和高可靠性的半导体闪速存储器.
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| 关 键 词： | 闪速存储器 SiGe量子点 增强F-N隧穿 |
Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling |
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| Deng Ning,Pan Liyang,Liu Zhihong,Zhu Jun,Chen Peiyi,Peng Li.Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling[J].Chinese Journal of Semiconductors,2006,27(3). |
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| Authors: | Deng Ning Pan Liyang Liu Zhihong Zhu Jun Chen Peiyi Peng Li |
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| Abstract: | A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/polySi floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing. Simulation results indicate the new structure provides high speed and reliability. Experimental results show that the operation voltage can be as much as 4V less than that of conventional full F-N tunneling NAND memory cells. Memory cells with the proposed structure can achieve higher speed, lower voltage, and higher reliability. |
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| Keywords: | flash memory SiGe quantum dots enhanced F-N tunneling |
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