| 蓝宝石衬底上侧向外延GaN中的位错降低 |
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| 引用本文： | 陈俊,王建峰,王辉,赵德刚,朱建军,张书明,杨辉. 蓝宝石衬底上侧向外延GaN中的位错降低[J]. 半导体学报, 2006, 27(3): 419-424 |
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| 作者姓名： | 陈俊 王建峰 王辉 赵德刚 朱建军 张书明 杨辉 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 采用侧向外延(ELOG)方法,在制作了条形掩膜图形的GaN衬底上用MOCVD生长高质量GaN.AFM,化学湿法腐蚀及TEM分析表明:采用两步法ELOG生长的GaN中,掩膜下方的缺陷被掩膜所阻挡,窗口区内二次生长的GaN的位错也大幅降低;在相邻生长前沿所形成的合并界面处形成晶界;化学湿法腐蚀无法得到关于合并界面处缺陷的信息.侧翼区域中极低的穿透位错使得ELOG GaN适用于在其上制作高性能的氮化物基激光器.
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| 关 键 词： | 金属有机物化学气相沉积 GaN 侧向外延 位错 |
| 收稿时间： | 2015-08-20 |
Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth |
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| Chen Jun, Wang Jianfeng, Wang Hui, Zhao Degang, Zhu Jianjun, Zhang Shuming, Yang Hui. Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth[J]. Journal of Semiconductors, 2006, In Press. Chen J, Wang J F, Wang H, Zhao D G, Zhu J J, Zhang S M, Yang H. Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth[J]. Chin. J. Semicond., 2006, 27(3): 419.Export: BibTex EndNote |
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| Authors: | Chen Jun Wang Jianfeng Wang Hui Zhao Degang Zhu Jianjun Zhang Shuming Yang Hui |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100084,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100085,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100087,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100088,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100089,China |
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| Abstract: | High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM, wet chemical etching, and TEM experiments show that with a two-step ELOG procedure,the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance. |
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| Keywords: | metalorganic chemical vapor deposition GaN epitaxial lateral overgrowth dislocation |
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