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一种用于开关电源启动电路的新型自偏置高压器件结构
引用本文:刘继芝,陈星弼,李定. 一种用于开关电源启动电路的新型自偏置高压器件结构[J]. 半导体学报, 2006, 27(1): 132-136
作者姓名:刘继芝  陈星弼  李定
作者单位:电子科技大学微电子与固体电子学院,成都,610054
摘    要:设计了一种新的用于离线式集成开关电源启动电路的自偏置高压器件结构.对一个RESURF高压(功率)器件的此种自偏置方法进行了原理分析和仿真模拟.采用该结构集成开关电源的启动电路可以节省芯片面积,降低电路功耗,易于控制且可提供较大的芯片内部电源电压.

关 键 词:开关电源  启动电路  自偏置  高压器件
收稿时间:2015-08-20

A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC
Liu Jizhi, Chen Xingbi, Li Ding. A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC[J]. Journal of Semiconductors, 2006, In Press. Liu J Z, Chen X B, Li D. A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC[J]. Chin. J. Semicond., 2006, 27(1): 132.Export: BibTex EndNote
Authors:Liu Jizhi  Chen Xingbi  Li Ding
Affiliation:School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China
Abstract:A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described.The structure and properties of the device,made by RESURF technology,are analyzed and simulated.Using this novel start-up circuit structure for the off-line switching model power supply IC can save the cell area,reduce the power consumption of the circuit,and easily control and supply the larger output voltage.
Keywords:switching model power supply   start-up circuit   self-bias   high-voltage device
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