| 快速预热处理对大直径CZ-Si中FPDs及清洁区的影响 |
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| 引用本文： | 张建强,刘彩池,周旗钢,王敬,郝秋艳,孙世龙,赵丽伟,滕晓云. 快速预热处理对大直径CZ-Si中FPDs及清洁区的影响[J]. 半导体学报, 2006, 27(1): 73-77 |
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| 作者姓名： | 张建强 刘彩池 周旗钢 王敬 郝秋艳 孙世龙 赵丽伟 滕晓云 |
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| 作者单位： | 1. 河北工业大学信息功能材料研究所,天津,300130
2. 北京有色金属研究总院,北京,100088 |
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| 基金项目： | 中国科学院资助项目，Tianjin Natural Sci. Found，河北省自然科学基金 |
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| 摘 要： | 研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h)+1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度.
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| 关 键 词： | CZSi 空洞型微缺陷 流动图形缺陷 快速热处理 MDZ |
| 收稿时间： | 2015-08-20 |
Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si |
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| Zhang Jianqiang, Liu Caichi, Zhou Qigang, Wang Jing, Hao Qiuyan, Sun Shilong, Zhao Liwei, Teng Xiaoyun. Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si[J]. Journal of Semiconductors, 2006, In Press. Zhang J Q, Liu C C, Zhou Q G, Wang J, Hao Q Y, Sun S L, Zhao L W, Teng X Y. Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si[J]. Chin. J. Semicond., 2006, 27(1): 73.Export: BibTex EndNote |
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| Authors: | Zhang Jianqiang Liu Caichi Zhou Qigang Wang Jing Hao Qiuyan Sun Shilong Zhao Liwei Teng Xiaoyun |
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| Affiliation: | Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China;General Research Institute for Nonferrous Metals,Beijing 100088,China;General Research Institute for Nonferrous Metals,Beijing 100088,China;Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China |
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| Abstract: | The relationship between flow pattern defects (FPDs) and the magic denuded zone (MDZ) in CZ silicon wafers is investigated after pre-RTA in different atmospheres.After pre-RTA at high temperature,the wafers are annealed at 800℃(4h)+1000℃(16h) to form an MDZ.After annealing in an Ar or N2/O2(9%) mixed atmosphere,the wafers exhibit low FPD density,high oxygen precipitation density,and a wide denuded zone.In the case of an N2/O2 mixed atmosphere,the FPD density and the oxygen precipitation density decrease with the increase of O2 content.Therefore the FPD density and oxygen precipitation density can be controlled by adjusting the N2/O2 ratio in the atmosphere |
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| Keywords: | CZSi void defects flow pattern defects(FPDs) RTA MDZ |
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