| GaInNAs/GaAs量子阱结构基态光跃迁的能量 |
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| 引用本文： | Yang Jinghai,杨景海,杨丽丽,张永军,刘文彦,王丹丹,郎集会,赵庆祥. GaInNAs/GaAs量子阱结构基态光跃迁的能量[J]. 半导体学报, 2006, 27(11): 1945-1949 |
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| 作者姓名： | Yang Jinghai 杨景海 杨丽丽 张永军 刘文彦 王丹丹 郎集会 赵庆祥 |
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| 作者单位： | 吉林师范大学凝聚态物理研究所,四平,136000;中国科学院长春光学精密机械与物理研究所,激发态重点实验室,长春,130033;吉林师范大学凝聚态物理研究所,四平,136000;查尔摩斯技术大学光电物理所,哥德堡S-41296,瑞典 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 从理论和实验两个方面对GaInNAs/GaAs量子阱结构基态的光跃迁能量进行研究.在理论计算过程中,分别采用电子有效质量近似法和双能级推斥模型计算了GaInNAs合金的电子空穴分立能级的能量及其带隙能,讨论了由应变引起的带隙变化量.将理论计算结果与光致发光的实验结果进行比较,两者符合得很好.并简单分析了N的加入对GaInNAs合金带隙能产生的影响.
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| 关 键 词： | 量子阱 光跃迁能量 有效质量近似 分子束外延 |
| 收稿时间： | 2015-08-18 |
Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures |
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| Yang Jinghai, Yang Lili, Zhang Yongjun, Liu Wenyan, Wang Dandan, Lang Jihui, Zhao Qingxiang. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Journal of Semiconductors, 2006, In Press. Yang J H, Yang L L, Zhang Y J, Liu W Y, Wang Dandan, Lang J H, Zhao Q X. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Chin. J. Semicond., 2006, 27(11): 1945.Export: BibTex EndNote |
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| Authors: | Yang Jinghai Yang Lili Zhang Yongjun Liu Wenyan Wang Dandan Lang Jihui Zhao Qingxiang |
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| Affiliation: | Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China，Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China，Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China;Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China;Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China;Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China;Department of Physics,Chalmers University of Technology,Gteborg SE-41296,Sweden |
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| Abstract: | The optical transition energy in GaInNAs/GaAs QW structures is investigated from theoretical and experimental aspects.The discrete-level energy and the band-gap energy are calculated using the effective-mass approximation and two-level repulsion model,respectively.The changes in the band-gap energy due to strains are also discussed.The theoretical and experimental transition energies of GaInNAs/GaAs quantum well structures are compared,and they agree well.The effect of N on the transition energies of GaInNAs/GaAs quantum well structures is analyzed simply |
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| Keywords: | quantum well optical transition energy effective-mass approximation molecular-beam epitaxy |
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