|
|||||
|
|
| 一种新型半绝缘键合SOI结构 | |
| 引用本文： | 谭开洲,冯建,刘勇,徐世六,杨谟华,李肇基,张正璠,刘玉奎,何开全. 一种新型半绝缘键合SOI结构[J]. 半导体学报, 2006, 27(10): 1828-1831 |
| 作者姓名： | 谭开洲 冯建 刘勇 徐世六 杨谟华 李肇基 张正璠 刘玉奎 何开全 |
| 作者单位： | 1. 电子科技大学微电子与固体电子学院,成都,610054;模拟集成电路国家重点实验室,重庆,400060 2. 模拟集成电路国家重点实验室,重庆,400060 3. 电子科技大学微电子与固体电子学院,成都,610054 |
| 基金项目： | 国家微电子预研资助项目 |
| 摘 要： | 报道了一种新型半绝缘键合SOI结构,采用化学气相淀积加外延生长键合过渡多晶硅层的方法实现了该结构.研制出的这种新结构,完整率大于85%,Si-Si键合界面接触比电阻小于5×10-4Ω·cm2.这种新结构可以广泛用于高低压功率集成电路、高可靠集成电路、MEMS、硅基光电集成等新器件和电路中. |
| 关 键 词： | 硅片键合 半绝缘SOI 多晶过渡层 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-04-24 |
A Novel Semi-Insulation Bonding SOI Structure |
|
| Tan Kaizhou, Feng Jian, Liu Yong, Xu Shiliu, Yang Mohua, Li Zhaoji, Zhang Zhengfan, Liu Yukui, He Kaiquan. A Novel Semi-Insulation Bonding SOI Structure[J]. Journal of Semiconductors, 2006, In Press. Tan K Z, Feng J, Liu Y, Xu S L, Yang M H, Li Z J, Zhang Z F, Liu Y K, He K Q. A Novel Semi-Insulation Bonding SOI Structure[J]. Chin. J. Semicond., 2006, 27(10): 1828.Export: BibTex EndNote | |
| Authors: | Tan Kaizhou Feng Jian Liu Yong Xu Shiliu Yang Mohua Li Zhaoji Zhang Zhengfan Liu Yukui He Kaiquan |
| Affiliation: | School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China |
| Abstract: | A novel semi-insulation bonding SOI structure that is realized by LPCVD and introducing an epitaxial interim polysilicon layer is reported.The integrality percentage of this new wafer structure is more than 85%.The contact specific resistance of the Si-Si bonding interface is less than 5E-4Ω·cm2.It can be widely applied in high-voltage ICs,high-reliability ICs,MEMS,and OEIC. |
| Keywords: | wafer bonding semi-insulation SOI interim polysilicon layer |
| 本文献已被 万方数据 等数据库收录！ | |
| 点击此处可从《半导体学报》浏览原始摘要信息 | |
| 点击此处可从《半导体学报》下载全文 | |