| fT为77GHz的蓝宝石衬底0.25μm栅长AlGaN/GaN高电子迁移率功率器件 |
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| 引用本文： | 郑英奎,刘果果,和致经,刘新宇,吴德馨.fT为77GHz的蓝宝石衬底0.25μm栅长AlGaN/GaN高电子迁移率功率器件[J].半导体学报,2006,27(6). |
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| 作者姓名： | 郑英奎 刘果果 和致经 刘新宇 吴德馨 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 在蓝宝石衬底上用MOCVD技术生长的AlGaN/GaN结构上制作出0.25μm栅长的高电子迁移率功率晶体管.0.25μm栅长的单指器件测到峰值跨导为250mS/mm,特征频率为77GHz.功率器件的最大电流密度达到1.07A/mm.8GHz频率下在片测试80×10μm栅宽器件的输出功率为27.04dBm,同时功率附加效率达到26.5%.
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| 关 键 词： | GaN 蓝宝石 HEMT |
0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz |
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| Zheng Yingkui,Liu Guoguo,He Zhijing,Liu Xinyu,Wu Dexin.0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz[J].Chinese Journal of Semiconductors,2006,27(6). |
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| Authors: | Zheng Yingkui Liu Guoguo He Zhijing Liu Xinyu Wu Dexin |
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| Abstract: | MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency (fT) of 77GHz are obtained for a 0.25μm gate-length single finger device. These power devices exhibit a maximum drain current density as high as 1.07A/mm. On-chip testing yielded a continuous-wave output power of 27. 04dBm at 8GHz with an associated power-added efficiency of 26. 5% for an 80 × 10μm device. |
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| Keywords: | GaN sapphire substrate high electron mobility transistor |
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