| NiSi/Si界面的剖面透射电镜研究 |
| |
| 引用本文： | 蒋玉龙,茹国平,屈新萍,李炳宗. NiSi/Si界面的剖面透射电镜研究[J]. 半导体学报, 2006, 27(2): 223-228 |
| |
| 作者姓名： | 蒋玉龙 茹国平 屈新萍 李炳宗 |
| |
| 作者单位： | 复旦大学微电子学系,上海,200433 |
| |
| 基金项目： | 中国科学院资助项目，上海市应用材料研究与发展基金，国家自然科学基金，中国-比利时合作项目 |
| |
| 摘 要： | 采用不同硅化工艺制备了NiSi薄膜并用剖面透射电镜(XTEM)对样品的NiSi/Si界面进行了研究.在未掺杂和掺杂(包括As和B)的硅衬底上通过物理溅射淀积Ni薄膜,经快速热处理过程(RTP)完成硅化反应.X射线衍射和喇曼散射谱分析表明在各种样品中都形成了NiSi.还研究了硅衬底掺杂和退火过程对NiSi/Si界面的影响.研究表明:使用一步RTP形成NiSi的硅化工艺,在未掺杂和掺As的硅衬底上,NiSi/Si界面较粗糙;而使用两步RTP形成NiSi所对应的NiSi/Si界面要比一步RTP的平坦得多.高分辨率XTEM分析表明,在所有样品中都形成了沿衬底硅〈111〉方向的轴延-NiSi薄膜中的一些特定晶面与衬底硅中的(111)面对准生长.同时讨论了轴延中的晶面失配问题.
|
| 关 键 词： | 接触界面 NiSi 镍硅化物 固相反应 快速热处理 |
| 收稿时间： | 2015-08-20 |
Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy |
| |
| Jiang Yulong, Ru Guoping, Qu Xinping, Li Bingzong. Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy[J]. Journal of Semiconductors, 2006, In Press. Jiang Y L, Ru G P, Qu X P, Li B Z. Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy[J]. Chin. J. Semicond., 2006, 27(2): 223.Export: BibTex EndNote |
| |
| Authors: | Jiang Yulong Ru Guoping Qu Xinping Li Bingzong |
| |
| Affiliation: | Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China |
| |
| Abstract: | Different silicidation processes are employed to form NiSi, and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy (XTEM). With the sputter deposition of a nickel thin film, nickel silicidation is realized on undoped and doped (As and B) Si(001) substrates by rapid thermal processing (RTP). The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectroscopy. The influence of the substrate doping and annealing process (one-step RTP and two-step RTP) on the NiSi/Si interface is investigated. The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface, while the two-step RTP results in a much smoother NiSi/Si interface.ic NiSi planes align with Si(111) planes in the substrate. Axiotaxy with spacing mismatch is also discussed. |
| |
| Keywords: | contact interface NiSi nickel silicide solid-state reaction rapid thermal processing |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
