| MBE生长的InP DHBT的性能 |
| |
| 引用本文： | 苏树兵,刘新宇,徐安怀,于进勇,齐鸣,刘训春,王润梅. MBE生长的InP DHBT的性能[J]. 半导体学报, 2006, 27(5): 792-795 |
| |
| 作者姓名： | 苏树兵 刘新宇 徐安怀 于进勇 齐鸣 刘训春 王润梅 |
| |
| 作者单位： | 1. 中国科学院微电子研究所,北京,100029
2. 中国科学院上海微系统与信息技术研究所,上海,200050 |
| |
| 摘 要： | 报道了一种自对准InP/InGaAs 双异质结双极晶体管的器件性能.成功制作了U型发射极尺寸为2μm×12μm的器件,其峰值共射直流增益超过300,残余电压约为0.16V,膝点电压仅为0.6V,而击穿电压约为6V.器件的截至频率达到80GHz,最大震荡频率为40GHz.这些特性使此类器件更适合于低压、低功耗及高频方面的应用.
|
| 关 键 词： | MBE Be掺杂InGaAs基区 磷化铟 双异质结双极晶体管 |
| 收稿时间： | 2015-08-20 |
Performance of an InP DHBT Grown by MBE |
| |
| Su Shubing, Liu Xinyu, Xu Anhuai, Yu Jinyong, Qi Ming, Liu Xunchun, Wang Runmei. Performance of an InP DHBT Grown by MBE[J]. Journal of Semiconductors, 2006, In Press. Su S B, Liu X Y, Xu A H, Yu J Y, Qi M, Liu X C, Wang R M. Performance of an InP DHBT Grown by MBE[J]. Chin. J. Semicond., 2006, 27(5): 792.Export: BibTex EndNote |
| |
| Authors: | Su Shubing Liu Xinyu Xu Anhuai Yu Jinyong Qi Ming Liu Xunchun Wang Runmei |
| |
| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
| |
| Abstract: | We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China.The device has a 2μm×12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0.16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V.The HBT exhibits good microwave performance with a current gain cutoff frequency of 80GHz and a maximum oscillation frequency of 40GHz.These results indicate that this InP/InGaAs DHBT is suitable for low-voltage,low-power,and high-frequency applications. |
| |
| Keywords: | MBE Be-doped InGaAs base InP double heterojunction bipolar transistor |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
