| 磷化铟单晶衬底的缺陷控制和高质量表面制备 |
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| 引用本文： | 赵有文,董志远,孙文荣,段满龙,杨子祥,吕旭如. 磷化铟单晶衬底的缺陷控制和高质量表面制备[J]. 半导体学报, 2006, 27(12): 2127-2133 |
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| 作者姓名： | 赵有文 董志远 孙文荣 段满龙 杨子祥 吕旭如 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 分析研究了一些缺陷对InP单晶衬底的影响,包括团状结构位错的产生及其对晶格完整性的影响,坑状微缺陷、晶片抛光损伤和残留杂质的清洗腐蚀等.对这些缺陷的形成原因和抑制途径进行了分析.在此基础上获得了"开盒即用(EPI-READY)"、具有良好晶格完整性、表面无损伤的InP单晶衬底抛光片.
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| 关 键 词： | 磷化铟 缺陷 衬底 抛光 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-07-16 |
Defect Control and High Quality Surface Preparation of InP Substrate |
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| Zhao Youwen, Dong Zhiyuan, Sun Wenrong, Duan Manlong, Yang Zixiang, Lü Xuru. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Journal of Semiconductors, 2006, In Press. Zhao Y W, Dong Z Y, Sun W R, Duan M L, Yang Z X, Lü X. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Chin. J. Semicond., 2006, 27(12): 2127.Export: BibTex EndNote |
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| Authors: | Zhao Youwen Dong Zhiyuan Sun Wenrong Duan Manlong Yang Zixiang Lü Xuru |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | Defects and their influence on InP single crystal substrate arc investigated.Results on cluster dislocation and its deterioration on lattice perfection,pit-like micro-defects,residual damage, and impurities and their removal by cleaning are presented.Formation mechanisms of the defects and approaches to suppressing them are discussed.Finally,epi-ready InP polished single crystal wafer with high lattice perfection,free of surface damage,is obtained. |
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| Keywords: | indium phosphide defect substrate polishing |
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