| 垂直腔面发射激光器中的侧向氧化 |
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| 引用本文： | 刘文莉,郝永芹,王玉霞,姜晓光,冯源,李海军,钟景昌. 垂直腔面发射激光器中的侧向氧化[J]. 半导体学报, 2006, 27(8): 1351-1354 |
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| 作者姓名： | 刘文莉 郝永芹 王玉霞 姜晓光 冯源 李海军 钟景昌 |
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| 作者单位： | 长春理工大学高功率半导体激光重点实验室,长春,130022;长春理工大学高功率半导体激光重点实验室,长春,130022;长春理工大学高功率半导体激光重点实验室,长春,130022;长春理工大学高功率半导体激光重点实验室,长春,130022;长春理工大学高功率半导体激光重点实验室,长春,130022;长春理工大学高功率半导体激光重点实验室,长春,130022;长春理工大学高功率半导体激光重点实验室,长春,130022 |
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| 摘 要： | 研究了垂直腔面发射激光器(VCSEL)的侧向氧化工艺及其特性.发现对于条形台面,氧化物生长遵循线性生长规律.但对于在VCSEL中采用的两种结构,氧化物的生长(温度高于435℃)表现为非线性生长行为.理论分析表明,台面结构的几何形状对高温下的氧化速率产生了影响.
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| 关 键 词： | 侧向氧化 量子阱 垂直腔面发射激光器 |
| 收稿时间： | 2015-08-20 |
Lateral Oxidation in Vertical Cavity Surface Emitting Lasers |
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| Liu Wenli, Hao Yongqin, Wang Yuxia, Jiang Xiaoguang, Feng Yuan, Li Haijun, Zhong Jingchang. Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J]. Journal of Semiconductors, 2006, In Press. Liu W L, Hao Y Q, Wang Y X, Jiang X G, Feng Y, Li H J, Zhong J C. Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J]. Chin. J. Semicond., 2006, 27(8): 1351.Export: BibTex EndNote |
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| Authors: | Liu Wenli Hao Yongqin Wang Yuxia Jiang Xiaoguang Feng Yuan Li Haijun Zhong Jingchang |
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| Affiliation: | National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130023,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130024,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130025,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130026,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130027,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130028,China |
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| Abstract: | Lateral oxidation in vertical cavity surface emitting lasers (VCSELs) is described,and its characteristics are investigated.A linear growth law is found for stripe mesas.However,oxide growth (above 435℃) follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL.Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures. |
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| Keywords: | lateral oxidation quantum well vertical cavity surface emitting laser |
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