| 共振隧穿二极管的压阻特性测试与研究 |
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| 引用本文： | 毛海央,熊继军,张文栋,薛晨阳,桑胜波,鲍爱达. 共振隧穿二极管的压阻特性测试与研究[J]. 半导体学报, 2006, 27(10): 1789-1793 |
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| 作者姓名： | 毛海央 熊继军 张文栋 薛晨阳 桑胜波 鲍爱达 |
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| 作者单位： | 中北大学仪器科学与动态测试教育部重点实验室,电子测试技术国防重点实验室,太原,030051 |
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| 基金项目： | 国家自然科学基金，霍英东教育基金 |
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| 摘 要： | 设计并搭建了检测共振隧穿二极管(RTD)压阻特性的实验系统,测试了RTD结构在不同应力状态下I-V特性曲线的漂移.实验结果表明RTD结构压阻特性的灵敏度大于1×10-8Pa-1.为了更精确地定量表达其压阻特性,研究了同一RTD结构I-V特性的一致性,得到相同环境条件下RTD电阻的最大相对漂移量小于3%,其中1%由测试仪器造成.
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| 关 键 词： | 共振隧穿二极管 压阻特性 一致性 灵敏度 喇曼光谱 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-04-24 |
Piezoresistive Properties of Resonant Tunneling Diodes |
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| Mao Haiyang, Xiong Jijun, Zhang Wendong, Xue Chenyang, Sang Shengbo, Bao Aida. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Journal of Semiconductors, 2006, In Press. Mao H Y, Xiong J J, Zhang W D, Xue C Y, Sang S B, Bao A D. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Chin. J. Semicond., 2006, 27(10): 1789.Export: BibTex EndNote |
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| Authors: | Mao Haiyang Xiong Jijun Zhang Wendong Xue Chenyang Sang Shengbo Bao Aida |
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| Affiliation: | Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China;Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China;Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China;Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China;Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China;Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China |
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| Abstract: | This paper reports the piezoresistive properties of resonant tunneling diodes (RTDs) as detected with a newly established testing system.The shifts of their I-V characteristics in different stress states are detected,demonstrating that the RTDs possess piezoresistive properties.The sensitivity of the RTDs is larger than 1E-8Pa-1.Moreover,to accurately illustrate the piezoresistive properties of RTD,the I-V characteristic coherence of an RTD is tested.According to the experimental results,the largest relative resistance shift of an RTD in the same environmental condition is less than 3%,1% of which is caused by the testing instrument. |
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| Keywords: | resonant tunneling diode piezoresistive property coherence sensitivity Raman spectrum |
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