| 低损耗衬底上实现无源低通滤波器 |
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| 引用本文： | 方杰,刘泽文,赵嘉昊,陈忠民,韦嘉,刘理天,李志坚.低损耗衬底上实现无源低通滤波器[J].半导体学报,2006,27(9). |
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| 作者姓名： | 方杰 刘泽文 赵嘉昊 陈忠民 韦嘉 刘理天 李志坚 |
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| 作者单位： | 1. 清华大学微电子研究所,北京,100084
2. 清华大学材料科学与工程系,北京,100084 |
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| 基金项目： | 国家"211"工程建设项目 |
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| 摘 要： | 分析比较了不同种类衬底上无源器件(片上电感和电容)的损耗机理,在OPS(氧化多孔硅)和HR(高阻硅)低损耗衬底上分别实现了片上低通滤波器.为了研究衬底损耗,设计了平面螺旋电感,其Q值在两种衬底上的仿真结果都超过了20.在OPS衬底上的低通滤波器实测-3dB带宽为2.9GHz,通带插入损耗在500MHz为0.87dB;在HR衬底上的低通滤波器实测-3dB带宽为2.3GHz,通带插入损耗在500MHz为0.42dB.
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| 关 键 词： | LC低通滤波器 低损耗衬底 片上电感 RF |
A Passive Low-Pass Filter on Low-Loss Substrate |
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| Fang Jie,Liu Zewen,Zhao Jiahao,Chen Zhongmin,Wei Jia,Liu Litian,Li Zhijian.A Passive Low-Pass Filter on Low-Loss Substrate[J].Chinese Journal of Semiconductors,2006,27(9). |
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| Authors: | Fang Jie Liu Zewen Zhao Jiahao Chen Zhongmin Wei Jia Liu Litian Li Zhijian |
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| Abstract: | The loss mechanisms of different passive devices (on-chip inductors and capacitors) on different substrates are analyzed and compared. OPS (oxidized porous silicon) and HR (high-resistivity) substrates are used as low-loss substrates for on-chip planar LPF (low pass filter) fabrication. For the study of substrate loss, a planar coil inductor is also designed. Simulation results show that Q (the quality factor) of the inductor on both substrates is over 20. Measurements of the LPF on OPS substrate give a - 3dB bandwidth of 2.9GHz and a midband insertion loss of 0. 87dB at 500MHz. The LPF on HR substrate gives a - 3dB bandwidth of 2.3GHz and a midband insertion loss of 0.42dB at 500MHz. |
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| Keywords: | LC low-pass filter low-loss substrate on-chip inductor RF |
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