在半绝缘SiC衬底上制备的S波段2W碳化硅MESFET

介绍了用热壁反应炉在50mm SiC半绝缘衬底上制备的SiC MESFET外延材料.其沟道层厚度约为0.35μm,掺杂浓度约为1.7×1017cm-3.沟道和衬底之间的缓冲层为非有意掺杂的弱n型.欧姆接触用的帽层掺杂浓度约1019cm-3.器件制备采用了ICP刻蚀等技术.微波测试结果表明,1mm栅宽功率器件封装后在2GHz下输出功率达到了2W.

S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate

A SiC MESFET structure is successfully prepared on a semi-insulated 50mm SiC substrate using a hotwall SiC reactor. The doping concentration for the channel layer is about 1.7 × 1017 cm-3 , and the thickness is about 0.35μm. An unintentionally n-doped buffer layer is employed between the substrate and the channel layer. A cap layer for Ohmic contact is doped to 1019 cm-3. MESFET devices are fabricated using inductively coupled plasma etching and other conventional tools. Power devices with a 1mm gate width are measured and a 2W output at 2GHz is obtained.