| 室温全电可操作的InAs/GaAs量子点存储器 |
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| 引用本文： | 杜军,王卿璞,Balocco C,Song A M. 室温全电可操作的InAs/GaAs量子点存储器[J]. 半导体学报, 2006, 27(2): 363-367 |
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| 作者姓名： | 杜军 王卿璞 Balocco C Song A M |
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| 作者单位： | 1. 山东大学物理与微电子学院,济南,250100
2. School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD, UK |
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| 基金项目： | 高等学校博士学科点专项科研项目 |
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| 摘 要： | 报道基于高电子迁移率晶体管(HEMT)结构的InAs/GaAs量子点存储器,它既可以在室温下工作,又可以完全由栅极电压来控制其存储状态.在室温下通过对InAs/GaAs量子点存储器的延滞回线、偏压降温C-V等特性的实时测试,证明了其存储机理是由量子点层的深能级引起的,而并非是由量子点本征能级的充、放电所造成的.
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| 关 键 词： | InAs/GaAs量子点 存储器 偏压降温 深能级 |
| 收稿时间： | 2015-08-20 |
Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots |
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| Du Jun, Wang Qingpu, Balocco C, Song A M. Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots[J]. Journal of Semiconductors, 2006, In Press. Du J, Wang Q P, Balocco C, Song A M. Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots[J]. Chin. J. Semicond., 2006, 27(2): 363.Export: BibTex EndNote |
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| Authors: | Du Jun Wang Qingpu Balocco C Song A M |
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| Affiliation: | School of Physics and Microelectronics,Shandong University,Ji’nan 250100,China;School of Physics and Microelectronics,Shandong University,Ji’nan 250100,China;School of Electrical and Electronic Engineering,University of Manchester,Manchester M60 1QD,UK;School of Electrical and Electronic Engineering,University of Manchester,Manchester M60 1QD,UK |
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| Abstract: | Memory devices fabricated in high-electron-mobility transistors with embedded InAs quantum dots (QDs) can be fully controlled by gate bias at room temperature.The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements |
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| Keywords: | InAs/GaAs self-assembled quantum dots memory device bias-cooling deep levels |
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